| PART |
Description |
Maker |
| SPN04N60S5 SPN04N60S505 |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
|
Infineon Technologies AG
|
| SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
http://
|
| SPP04N60S5 SPP04N60S507 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP04N60C3 SPA04N60C3 SPP04N60C309 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPA20N60CFD09 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPB12N50C305 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| SPP20N60C309 SPP20N60C3 SPI20N60C3 SPA20N60C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| SPP21N50C3 SPP21N50C307 SPI21N50C3 SPA21N50C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| SPP06N60C309 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
Infineon Technologies A...
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| IPB60R060C7 |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
|
Infineon Technologies A...
|
